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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *Low collector saturation voltage *High DC current gain *Excellent safe operating area APPLICATIONS *Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6360 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 100 7 12 24 4 150 150 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition freuqency CONDITIONS IC=0.2A ;IB=0 IC=6A ;IB=0.6A IC=12A; IB=2.4A IC=6A ; VCE=4V VCE=100V; IB=0 VCE=120V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=6A ; VCE=4V IC=12A ; VCE=4V IC=1A ; VCE=4V 15 5 0.2 MIN 100 TYP. 2N6360 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 fT MAX UNIT V 1.4 4.0 2.2 2.0 2.0 10.0 5.0 V V V mA mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6360 Fig.2 outline dimensions (unindicated tolerance:0.10mm) 3 |
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